Electronic materials with a wide band gap: recent developments
نویسندگان
چکیده
منابع مشابه
Electronic materials with a wide band gap: recent developments
The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a te...
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Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 withou...
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ژورنال
عنوان ژورنال: IUCrJ
سال: 2014
ISSN: 2052-2525
DOI: 10.1107/s2052252514017229