Electronic materials with a wide band gap: recent developments

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Electronic materials with a wide band gap: recent developments

The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E g = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E g = 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a te...

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ژورنال

عنوان ژورنال: IUCrJ

سال: 2014

ISSN: 2052-2525

DOI: 10.1107/s2052252514017229